Invention Grant
- Patent Title: Method of manufacturing superjunction structure
- Patent Title (中): 超结构结构的制造方法
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Application No.: US13075017Application Date: 2011-03-29
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Publication No.: US08440529B2Publication Date: 2013-05-14
- Inventor: Jiquan Liu , Xuan Xie
- Applicant: Jiquan Liu , Xuan Xie
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong NEC Electronics Co., Ltd.
- Current Assignee: Shanghai Hua Hong NEC Electronics Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: CN201010137500 20100331
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention discloses a method of manufacturing superjunction structure, which comprises: step 1, grow an N type epitaxial layer on a substrate having a (100) or (110) oriented surface; step 2, etch the N type epitaxial layer to form trenches therein; step 3, fill the trenches by P type epitaxial growth in the trenches by using a mixture of silicon source gas, halide gas, hydrogen gas, and doping gas. By using the manufacturing method according to the present invention, no void or only small voids are formed in the trenches after trench filling.
Public/Granted literature
- US20110244664A1 METHOD OF MANUFACTURING SUPERJUNCTION STRUCTURE Public/Granted day:2011-10-06
Information query
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