公开(公告)号：US20130105796A1

公开(公告)日：2013-05-02

申请号：US13652812

申请日：2012-10-16

Applicant: JIQUAN LIU ,  SHENGAN XIAO ,  WEI JI

Inventor： JIQUAN LIU ,  SHENGAN XIAO ,  WEI JI

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming an epitaxial layer on a top surface of the semiconductor substrate and having a predetermined thickness, and forming a plurality of trenches in the epitaxial layer. The trenches are formed in the epitaxial layer and have a predetermined depth, top width, and bottom width. Further, the method includes performing a first trench filling process to form a semiconductor layer inside of the trenches using a mixture gas containing at least silicon source gas and halogenoid gas, stopping the first trench filling process when at least one trench is not completely filled, and performing a second trench filling process, different from the first trench filling process, to fill the plurality of trenches completely.

Abstract translation: 提供了制造半导体结构的方法。 该方法包括提供半导体衬底，在半导体衬底的顶表面上形成具有预定厚度的外延层，并在外延层中形成多个沟槽。 沟槽形成在外延层中并且具有预定的深度，顶部宽度和底部宽度。 此外，该方法包括：使用至少包含硅源气体和卤素气体的混合气体，进行沟槽内部形成半导体层的第一沟槽填充处理，当至少一个沟槽未完全填充时停止第一沟槽填充处理， 并且执行与第一沟槽填充处理不同的第二沟槽填充处理，以完全填充多个沟槽。

公开(公告)号：US20110144432A1

公开(公告)日：2011-06-16

申请号：US12638955

申请日：2009-12-15

Applicant: Jianmin SI ,  Jiquan LIU ,  Jingyi FENG ,  Shujie CHEN ,  Liangjing WANG ,  Jiaguo WU ,  Yi LV

Inventor： Jianmin SI ,  Jiquan LIU ,  Jingyi FENG ,  Shujie CHEN ,  Liangjing WANG ,  Jiaguo WU ,  Yi LV

IPC: A61B1/04

CPC classification number: A61B1/2736 ,  A61B5/06 ,  A61B5/065 ,  A61B6/03

Abstract: A device for Computer Simulated Marking Targeting Biopsy (CSMTB) has at least a space locator, and a main control module, including a surface model sub-module, a positioning sub-module, a tracking sub-module, a virtual endoscope sub-module, and a marking targeting biopsy sub-module. The device accurately detects minimal gastric lesions, and reduces pain to patients and thus decreases the workload of a doctor.

Abstract translation: 用于计算机模拟标记目标活检（CSMTB）的装置至少具有空间定位器和主控模块，包括表面模型子模块，定位子模块，跟踪子模块，虚拟内窥镜子模块 ，以及针对活检子模块的标记。 该装置准确地检测到最小的胃损伤，并且减轻患者的疼痛，从而降低医生的工作量。

公开(公告)号：US08440529B2

公开(公告)日：2013-05-14

申请号：US13075017

申请日：2011-03-29

Applicant: Jiquan Liu ,  Xuan Xie

Inventor： Jiquan Liu ,  Xuan Xie

IPC: H01L21/00

CPC classification number: H01L29/66712 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0634

Abstract: The present invention discloses a method of manufacturing superjunction structure, which comprises: step 1, grow an N type epitaxial layer on a substrate having a (100) or (110) oriented surface; step 2, etch the N type epitaxial layer to form trenches therein; step 3, fill the trenches by P type epitaxial growth in the trenches by using a mixture of silicon source gas, halide gas, hydrogen gas, and doping gas. By using the manufacturing method according to the present invention, no void or only small voids are formed in the trenches after trench filling.

Abstract translation: 本发明公开了一种制造超结构结构的方法，包括：步骤1，在具有（100）或（110）取向表面的衬底上生长N型外延层; 步骤2，蚀刻N型外延层以在其中形成沟槽; 步骤3，通过使用硅源气体，卤化物气体，氢气和掺杂气体的混合物在沟槽中通过P型外延生长填充沟槽。 通过使用根据本发明的制造方法，在沟槽填充之后，在沟槽中不形成空隙或仅形成小的空隙。

公开(公告)号：US08348831B2

公开(公告)日：2013-01-08

申请号：US12638955

申请日：2009-12-15

Applicant: Jianmin Si ,  Jiquan Liu ,  Jingyi Feng ,  Shujie Chen ,  Liangjing Wang ,  Jiaguo Wu ,  Yi Lv

Inventor： Jianmin Si ,  Jiquan Liu ,  Jingyi Feng ,  Shujie Chen ,  Liangjing Wang ,  Jiaguo Wu ,  Yi Lv

IPC: A61B5/05

CPC classification number: A61B1/2736 ,  A61B5/06 ,  A61B5/065 ,  A61B6/03

Abstract: A device for Computer Simulated Marking Targeting Biopsy (CSMTB) has at least a space locator, and a main control module, including a surface model sub-module, a positioning sub-module, a tracking sub-module, a virtual endoscope sub-module, and a marking targeting biopsy sub-module. The device accurately detects minimal gastric lesions, and reduces pain to patients and thus decreases the workload of a doctor.

Abstract translation: 用于计算机模拟标记目标活检（CSMTB）的装置至少具有空间定位器和主控模块，包括表面模型子模块，定位子模块，跟踪子模块，虚拟内窥镜子模块 ，以及针对活检子模块的标记。 该装置准确地检测到最小的胃损伤，并且减轻患者的疼痛，从而降低医生的工作量。

公开(公告)号：US20110244664A1

公开(公告)日：2011-10-06

申请号：US13075017

申请日：2011-03-29

Applicant: Jiquan Liu ,  Xuan Xie

Inventor： Jiquan Liu ,  Xuan Xie

IPC: H01L21/20

CPC classification number: H01L29/66712 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0634

Abstract: The present invention discloses a method of manufacturing superjunction structure, which comprises: step 1, grow an N type epitaxial layer on a substrate having a (100) or (110) oriented surface; step 2, etch the N type epitaxial layer to form trenches therein; step 3, fill the trenches by P type epitaxial growth in the trenches by using a mixture of silicon source gas, halide gas, hydrogen gas, and doping gas. By using the manufacturing method according to the present invention, no void or only small voids are formed in the trenches after trench filling.

Abstract translation: 本发明公开了一种制造超结构结构的方法，包括：步骤1，在具有（100）或（110）取向表面的衬底上生长N型外延层; 步骤2，蚀刻N型外延层以在其中形成沟槽; 步骤3，通过使用硅源气体，卤化物气体，氢气和掺杂气体的混合物在沟槽中通过P型外延生长填充沟槽。 通过使用根据本发明的制造方法，在沟槽填充之后，在沟槽中不形成空隙或仅形成小的空隙。

公开(公告)号：US08779423B2

公开(公告)日：2014-07-15

申请号：US13652812

申请日：2012-10-16

Applicant: Jiquan Liu ,  Shengan Xiao ,  Wei Ji

Inventor： Jiquan Liu ,  Shengan Xiao ,  Wei Ji

IPC: H01L29/04

CPC classification number: H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming an epitaxial layer on a top surface of the semiconductor substrate and having a predetermined thickness, and forming a plurality of trenches in the epitaxial layer. The trenches are formed in the epitaxial layer and have a predetermined depth, top width, and bottom width. Further, the method includes performing a first trench filling process to form a semiconductor layer inside of the trenches using a mixture gas containing at least silicon source gas and halogenoid gas, stopping the first trench filling process when at least one trench is not completely filled, and performing a second trench filling process, different from the first trench filling process, to fill the plurality of trenches completely.

Abstract translation: 提供了制造半导体结构的方法。 该方法包括提供半导体衬底，在半导体衬底的顶表面上形成具有预定厚度的外延层，并在外延层中形成多个沟槽。 沟槽形成在外延层中并且具有预定的深度，顶部宽度和底部宽度。 此外，该方法包括：使用至少包含硅源气体和卤素气体的混合气体，进行沟槽内部形成半导体层的第一沟槽填充处理，当至少一个沟槽未完全填充时停止第一沟槽填充处理， 并且执行与第一沟槽填充处理不同的第二沟槽填充处理，以完全填充多个沟槽。

公开(公告)号：US20110287613A1

公开(公告)日：2011-11-24

申请号：US13106778

申请日：2011-05-12

Applicant: Jiquan Liu ,  Shengan Xiao

Inventor： Jiquan Liu ,  Shengan Xiao

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7802

Abstract: A manufacturing method of superjunction structure is disclosed. After the growth of an epitaxial layer on a substrate, deep trenches are etched in the epitaxial layer. A mixture of silicon source gas, hydrogen gas, halide gas and doping gas is used for trench tilling by means of epitaxial growth. The epitaxial growth rate on trench sidewalls near the bottom of the trench is set to be higher than that near the top of the trench by adjusting the flow rates of the silicon source gas and the halide gas and other parameters. By changing the flow rate of the doping gas at different stages of the epitaxial filling process, the trenches can be filled with epitaxial layers of different doping concentrations, with higher doping concentration near the bottom and lower doping concentration near the top.

Abstract translation: 公开了一种超结构结构的制造方法。 在衬底上生长外延层之后，在外延层中蚀刻深沟槽。 通过外延生长，将硅源气体，氢气，卤化物气体和掺杂气体的混合物用于沟槽耕作。 通过调整硅源气体和卤化物气体的流量等参数，将沟槽底部附近的沟槽侧壁上的外延生长率设定为高于沟槽顶部附近的外延生长速度。 通过改变外延填充过程不同阶段的掺杂气体的流速，可以用不同掺杂浓度的外延层填充沟槽，靠近底部的掺杂浓度越高，顶部附近的掺杂浓度越低。