发明授权
US08440578B2 GCIB process for reducing interfacial roughness following pre-amorphization
失效
用于减少非晶化后的界面粗糙度的GCIB工艺
- 专利标题： GCIB process for reducing interfacial roughness following pre-amorphization
- 专利标题（中）： 用于减少非晶化后的界面粗糙度的GCIB工艺
-
申请号： US13073540申请日： 2011-03-28
-
公开(公告)号： US08440578B2公开(公告)日： 2013-05-14
- 发明人: John Gumpher
- 申请人： John Gumpher
- 申请人地址： US MA Billerica
- 专利权人： TEL Epion Inc.
- 当前专利权人： TEL Epion Inc.
- 当前专利权人地址： US MA Billerica
- 代理机构： Wood, Herron & Evans, LLP
- 主分类号： H01L21/36
- IPC分类号： H01L21/36 ; H01L21/20 ; H01L21/425 ; H01L21/461 ; H01L21/302 ; H01L21/469
摘要：
A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness.