Invention Grant
US08441067B2 Power device with low parasitic transistor and method of making the same
有权
具有低寄生晶体管的功率器件及其制造方法
- Patent Title: Power device with low parasitic transistor and method of making the same
- Patent Title (中): 具有低寄生晶体管的功率器件及其制造方法
-
Application No.: US13070479Application Date: 2011-03-24
-
Publication No.: US08441067B2Publication Date: 2013-05-14
- Inventor: Wei-Chieh Lin
- Applicant: Wei-Chieh Lin
- Applicant Address: TW Hsinchu Science Park, Hsinchu
- Assignee: Sinopower Semiconductor Inc.
- Current Assignee: Sinopower Semiconductor Inc.
- Current Assignee Address: TW Hsinchu Science Park, Hsinchu
- Agent Winston Hsu; Scott Margo
- Priority: TW99143440A 20101213
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
The power device with low parasitic transistor comprises a recessed transistor and a heavily doped region at a side of a source region of the recessed transistor. The conductive type of the heavily doped region is different from that of the source region. In addition, a contact plug contacts the heavily doped region and connects the heavily doped region electrically. A source wire covers and contacts the source region and the contact plug to make the source region and the heavily doped region have the same electrical potential.
Public/Granted literature
- US20120146138A1 POWER DEVICE WITH LOW PARASITIC TRANSISTOR AND METHOD OF MAKING THE SAME Public/Granted day:2012-06-14
Information query
IPC分类:
