发明授权
- 专利标题： Non-planar semiconductor structure and fabrication method thereof
- 专利标题（中）： 非平面半导体结构及其制造方法
-
申请号： US13224344申请日： 2011-09-02
-
公开(公告)号： US08441072B2公开(公告)日： 2013-05-14
- 发明人: Shih-Hung Tsai , Chien-Ting Lin , Chin-Cheng Chien , Chin-Fu Lin , Chih-Chien Liu , Teng-Chun Tsai , Chun-Yuan Wu
- 申请人： Shih-Hung Tsai , Chien-Ting Lin , Chin-Cheng Chien , Chin-Fu Lin , Chih-Chien Liu , Teng-Chun Tsai , Chun-Yuan Wu
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. A non-planar semiconductor process is also provided for forming the semiconductor structure.
公开/授权文献
信息查询
IPC分类:
