Invention Grant
US08441116B2 Semiconductor package having substrate for high speed semiconductor package
有权
具有用于高速半导体封装的衬底的半导体封装
- Patent Title: Semiconductor package having substrate for high speed semiconductor package
- Patent Title (中): 具有用于高速半导体封装的衬底的半导体封装
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Application No.: US13465274Application Date: 2012-05-07
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Publication No.: US08441116B2Publication Date: 2013-05-14
- Inventor: Woong Sun Lee , Qwan Ho Chung , Il Hwan Cho , Sang Joon Lim , Jong Woo Yoo , Jin Ho Bae , Seung Hyun Lee
- Applicant: Woong Sun Lee , Qwan Ho Chung , Il Hwan Cho , Sang Joon Lim , Jong Woo Yoo , Jin Ho Bae , Seung Hyun Lee
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0129658 20071213
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The substrate for a semiconductor package includes a substrate body having a first surface and a second surface opposite to the first surface. Connection pads are formed near an edge of the first surface. Signal lines having conductive vias and first, second, and third line parts are formed. The first line parts are formed on the first surface and are connected to the connection pads and the conductive vias, which pass through the substrate body. The second line parts are formed on the first surface and connect to the conductive vias. The third line parts are formed on the second surface and connect to the conductive vias. The second and third line parts are formed to have substantially the same length. The semiconductor package utilizes the above substrate for processing data at a high speed.
Public/Granted literature
- US20120217637A1 SUBSTRATE FOR HIGH SPEED SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE HAVING THE SAME Public/Granted day:2012-08-30
Information query
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