Invention Grant
- Patent Title: Method for removing copper oxide layer
- Patent Title (中): 去除氧化铜层的方法
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Application No.: US12695273Application Date: 2010-01-28
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Publication No.: US08444868B2Publication Date: 2013-05-21
- Inventor: Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
- Applicant: Tien-Jen Cheng , Stephan Grunow , Zhengwen Li , Huilong Zhu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Yuanmin Cai
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.
Public/Granted literature
- US20110183520A1 Method for Removing Copper Oxide Layer Public/Granted day:2011-07-28
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