发明授权
- 专利标题： Generation of multiple diameter nanowire field effect transistors
- 专利标题（中）： 生成多直径纳米线场效应晶体管
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申请号： US12778517申请日： 2010-05-12
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公开(公告)号： US08445337B2公开(公告)日： 2013-05-21
- 发明人: Sarunya Bangsaruntip , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人： Sarunya Bangsaruntip , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of modifying a wafer having semiconductor disposed on an insulator is provided and includes establishing first and second regions of the wafer with different initial semiconductor thicknesses, forming pairs of semiconductor pads connected via respective nanowire channels at each of the first and second regions and reshaping the nanowire channels into nanowires each having a respective differing thickness reflective of the different initial semiconductor thicknesses at each of the first and second regions.
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