Invention Grant
- Patent Title: Electron beam annealing apparatus and annealing methods using the same
- Patent Title (中): 电子束退火装置及使用其的退火方法
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Application No.: US12457916Application Date: 2009-06-25
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Publication No.: US08445366B2Publication Date: 2013-05-21
- Inventor: Jung-hyun Lee , Jong-min Kim , Dong-joon Ma , Chang-soo Lee
- Applicant: Jung-hyun Lee , Jong-min Kim , Dong-joon Ma , Chang-soo Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0127268 20081215
- Main IPC: H01L21/428
- IPC: H01L21/428 ; H01L21/477
Abstract:
Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate.
Public/Granted literature
- US20100147807A1 Electron beam annealing apparatuses and annealing methods using the same Public/Granted day:2010-06-17
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