发明授权
US08445373B2 Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films
失效
提高沉积氧化铟锡（ITO）薄膜导电性能和光学性能的方法
- 专利标题： Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films
- 专利标题（中）： 提高沉积氧化铟锡（ITO）薄膜导电性能和光学性能的方法
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申请号： US12457006申请日： 2009-05-28
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公开(公告)号： US08445373B2公开(公告)日： 2013-05-21
- 发明人: David M. Broadway , Yiwei Lu
- 申请人： David M. Broadway , Yiwei Lu
- 申请人地址： US MI Auburn Hills
- 专利权人： Guardian Industries Corp.
- 当前专利权人： Guardian Industries Corp.
- 当前专利权人地址： US MI Auburn Hills
- 代理机构： Nixon & Vanderhye P.C.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.
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