发明授权
- 专利标题： Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
- 专利标题（中）： 透明纳米晶体接触到宽带隙半导体器件
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申请号： US12205652申请日： 2008-09-05
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公开(公告)号： US08445383B2公开(公告)日： 2013-05-21
- 发明人: Karl D. Hobart , Tatyana I Feygelson , Marko J Tadjer , Joshua D. Caldwell , Kendrick X Liu , Francis J. Kub , Michael A Mastro , James E Butler
- 申请人： Karl D. Hobart , Tatyana I Feygelson , Marko J Tadjer , Joshua D. Caldwell , Kendrick X Liu , Francis J. Kub , Michael A Mastro , James E Butler
- 申请人地址： US DC Washington
- 专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理商 Amy Ressing; Roy Roberts
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.
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