公开(公告)号：US08445383B2

公开(公告)日：2013-05-21

申请号：US12205652

申请日：2008-09-05

申请人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

发明人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

IPC分类号： H01L21/302

CPC分类号： H01S5/183 ,  H01L21/0495 ,  H01L29/6606 ,  H01S5/0425 ,  H01S5/32341

摘要： A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

摘要翻译： 开发了NCD和4H-SiC薄膜之间的异质结。 未掺杂和B掺杂的NCD沉积在n-和p- SiC外延层上。 在p + NCD / n-SiC上的IV测量显示肖特基整流行为具有约0.2V的导通电压。电流增加超过8个数量级，在30℃下的理想因子为1.17。理想的能带图表示 从SiC导带到NCD膜的价带或受体水平的电子传输的可能传导机制。