Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.