发明授权
- 专利标题： Method of forming a semiconductor device
- 专利标题（中）： 形成半导体器件的方法
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申请号： US13156933申请日： 2011-06-09
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公开(公告)号： US08445982B2公开(公告)日： 2013-05-21
- 发明人: Chin-Tsan Yeh , Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su
- 申请人： Chin-Tsan Yeh , Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su
- 申请人地址： TW
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW
- 代理机构： Baker & McKenzie LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A polysilicon structure and method of forming the polysilicon structure are disclosed, where the method includes a two-step deposition and planarization process. The disclosed process reduces the likelihood of defects such as voids, particularly where polysilicon is deposited in a trench having a high aspect ratio. A first polysilicon structure is deposited that includes a trench liner portion and a first upper portion. The trench liner portion only partially fills the trench, while the first upper portion extends over the adjacent field isolation structures. Next, at least a portion of the first upper portion of the first polysilicon structure is removed. A second polysilicon structure is then deposited that includes a trench plug portion and a second upper portion. The trench is filled by the plug portion, while the second upper portion extends over the adjacent field isolation structures. The second upper portion is then removed.
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