Invention Grant
US08446926B2 Broad-area edge-emitting semiconductor laser with limited thermal contact
有权
具有有限热接触的广域边缘发射半导体激光器
- Patent Title: Broad-area edge-emitting semiconductor laser with limited thermal contact
- Patent Title (中): 具有有限热接触的广域边缘发射半导体激光器
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Application No.: US13534372Application Date: 2012-06-27
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Publication No.: US08446926B2Publication Date: 2013-05-21
- Inventor: David Schleuning , Kenneth D. Scholz
- Applicant: David Schleuning , Kenneth D. Scholz
- Applicant Address: US CA Santa Clara
- Assignee: Coherent, Inc.
- Current Assignee: Coherent, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Morrison & Foerster LLP
- Main IPC: H01S3/04
- IPC: H01S3/04
Abstract:
A diode-laser having an elongated diode-laser emitter is mounted on a relatively massive heat-sink. Two parallel grooves are machined into the heat-sink to leave a relatively narrow elongated ridge of the heat-sink between the grooves. The ridge has a width about equal to or narrower that the width of the emitter. The diode-laser is mounted on the heat-sink such that thermal communication between the emitter and heat-sink is essentially limited to thermal communication with the ridge.
Public/Granted literature
- US20120263201A1 BROAD-AREA EDGE-EMITTING SEMICONDUCTOR LASER WITH LIMITED THERMAL CONTACT Public/Granted day:2012-10-18
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