发明授权
- 专利标题： Flash memory devices and methods for controlling a flash memory device
- 专利标题（中）： 闪存设备和用于控制闪存设备的方法
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申请号： US12721724申请日： 2010-03-11
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公开(公告)号： US08447917B2公开(公告)日： 2013-05-21
- 发明人: Yeow-Chyi Chen , Hong-Ching Chen , Li-Chun Tu , Tzu-Chieh Lin , Chi-Wei Peng
- 申请人： Yeow-Chyi Chen , Hong-Ching Chen , Li-Chun Tu , Tzu-Chieh Lin , Chi-Wei Peng
- 申请人地址： TW Hsin-Chu
- 专利权人： Mediatek Inc.
- 当前专利权人： Mediatek Inc.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F12/02
摘要：
A flash memory device includes a memory array and a memory control circuit. The memory array includes memory modules. Each memory module is located in a memory channel and includes a predetermined number of memory cells. The memory control circuit is coupled to the memory array via an address latch enable (ALE) pin and a command latch enable (CLE) pin. The ALE pin and the CLE pin are coupled to all of the memory cells and shared by all of the memory cells in the memory array.
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