Invention Grant
- Patent Title: Flash memory devices and methods for controlling a flash memory device
- Patent Title (中): 闪存设备和用于控制闪存设备的方法
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Application No.: US12721724Application Date: 2010-03-11
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Publication No.: US08447917B2Publication Date: 2013-05-21
- Inventor: Yeow-Chyi Chen , Hong-Ching Chen , Li-Chun Tu , Tzu-Chieh Lin , Chi-Wei Peng
- Applicant: Yeow-Chyi Chen , Hong-Ching Chen , Li-Chun Tu , Tzu-Chieh Lin , Chi-Wei Peng
- Applicant Address: TW Hsin-Chu
- Assignee: Mediatek Inc.
- Current Assignee: Mediatek Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02
Abstract:
A flash memory device includes a memory array and a memory control circuit. The memory array includes memory modules. Each memory module is located in a memory channel and includes a predetermined number of memory cells. The memory control circuit is coupled to the memory array via an address latch enable (ALE) pin and a command latch enable (CLE) pin. The ALE pin and the CLE pin are coupled to all of the memory cells and shared by all of the memory cells in the memory array.
Public/Granted literature
- US20100332734A1 FLASH MEMORY DEVICES AND METHODS FOR CONTROLLING A FLASH MEMORY DEVICE Public/Granted day:2010-12-30
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