- 专利标题: Semiconductor memory device
-
申请号: US12888822申请日: 2010-09-23
-
公开(公告)号: US08448034B2公开(公告)日: 2013-05-21
- 发明人: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- 申请人: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-029114 20100212
- 主分类号: H04L1/00
- IPC分类号: H04L1/00 ; G06F11/00
摘要:
According to one embodiment, a semiconductor memory device includes semiconductor memory chips in which data requested to be written. The data has one or more pieces of first data in a predetermined unit. The device includes a write controller that writes the first data and redundancy information calculated by using a predetermined number of pieces of the first data and used for correcting an error in the predetermined number of pieces of the first data into different semiconductor memory chips; and a storage unit that stores identification information and region specifying information so as to be associated with each other. The identification information associates the first data and the redundancy information, and the region specifying information specifies a plurality of storage regions in the semiconductor memory chips to which the pieces of the first data and the redundancy information associated with each other are written.
公开/授权文献
- US20110202812A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2011-08-18
信息查询