发明授权
- 专利标题： Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
- 专利标题（中）： 微晶半导体膜的形成方法及半导体装置的制造方法
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申请号： US13282650申请日： 2011-10-27
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公开(公告)号： US08450158B2公开(公告)日： 2013-05-28
- 发明人: Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi
- 申请人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2010-247527 20101104
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/365
摘要：
A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains.
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