公开(公告)号：US08778745B2

公开(公告)日：2014-07-15

申请号：US13159830

申请日：2011-06-14

申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0262 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×102 Torr and lower than or equal to 1.0×103 Torr.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过在第一条件下将氢和沉积气体引入第一处理室中，在绝缘膜上形成晶种，并通过引入氢和沉积气体在晶种上形成微晶半导体膜 在第二条件下进入第二处理室：沉积气体的第二流量在第一值和第二值之间周期性地变化; 并且第二处理室中的第二压力高于或等于1.0×102乇并且小于或等于1.0×10 3乇。

公开(公告)号：US08426295B2

公开(公告)日：2013-04-23

申请号：US13267257

申请日：2011-10-06

申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi ,  Yoshitaka Yamamoto

发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi ,  Yoshitaka Yamamoto

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28008 ,  H01L29/04 ,  H01L29/6675

摘要： To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

摘要翻译： 提供具有高结晶度和高膜密度的微晶硅膜的制造方法。 在本发明的微晶硅膜的制造方法中，在第一条件下，在绝缘膜上形成包含混晶相的第一微晶硅膜，在第二条件下形成第二微晶硅膜。 第一条件和第二条件是使用含硅和含氢气体的沉积气体作为第一源气体和第二源气体的条件。 在第一条件下以第一气体的供给和第二气体的供给交替进行的方式供给第一源气体。

公开(公告)号：US08450158B2

公开(公告)日：2013-05-28

申请号：US13282650

申请日：2011-10-27

申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

IPC分类号： H01L21/336 ,  H01L21/365

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  Y02A40/29

摘要： A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains.

摘要翻译： 在通过等离子体CVD法在绝缘膜上形成包含非晶硅区域的混合相晶粒和作为可以被认为是单晶的微晶的晶种的晶种，其中在第一条件下，使得具有高的 以低密度形成晶粒尺寸的结晶度和高均匀性，然后通过等离子体CVD法在微晶半导体膜上形成层叠在晶种上的第二条件，使得混合相晶粒生长以填充 混合相之间的间隙。

公开(公告)号：US08859404B2

公开(公告)日：2014-10-14

申请号：US13211565

申请日：2011-08-17

申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

IPC分类号： C23C16/24 ,  H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L29/786 ,  H01L31/18 ,  H01L31/0368 ,  H01L29/04 ,  H01L29/66

CPC分类号： H01L21/02532 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A seed crystal including mixed phase grains having high crystallinity at a low density is formed under a first condition over an insulating film, and then a first microcrystalline semiconductor film is formed over the seed crystal under a second condition that allows the mixed phase grains to grow and a space between the mixed phase grains to be filled. Then, a second microcrystalline semiconductor film is formed over the first microcrystalline semiconductor film under a third condition that allows formation of a microcrystalline semiconductor film having high crystallinity without increasing the space between the mixed phase grains included in the first microcrystalline semiconductor film.

摘要翻译： 在第一条件下，在绝缘膜上形成包含低密度结晶度的混合相的晶种，然后在允许混合晶粒生长的第二条件下在晶种上形成第一微晶半导体膜 以及要填充的混合相颗粒之间的空间。 然后，在允许形成具有高结晶度的微晶半导体膜而不增加包含在第一微晶半导体膜中的混晶相之间的空间的第三条件下，在第一微晶半导体膜上形成第二微晶半导体膜。

公开(公告)号：US09048147B2

公开(公告)日：2015-06-02

申请号：US13613811

申请日：2012-09-13

申请人： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： G09G3/36 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1365 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/78648 ,  Y10T428/24331

摘要： A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

摘要翻译： 提供了一种可以缩小框架并且显示特性优异的显示装置。 在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极， 开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括 第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。 逆变器电路可以是EDMOS电路。

公开(公告)号：US08558236B2

公开(公告)日：2013-10-15

申请号：US13196926

申请日：2011-08-03

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： H01L29/786

CPC分类号： H01L27/1288 ,  H01L21/67017 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78687 ,  H01L29/78696

摘要： An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.

摘要翻译： 目的是减少薄膜晶体管的截止电流。 另一个目的是改善薄膜晶体管的电特性。 此外，还有另一个目的是提高使用薄膜晶体管的显示装置的图像质量。 本发明的一个方面是一种薄膜晶体管，它包括半导体膜，该半导体膜形成在栅电极之上，并且在栅电极的内部区域中，其不到达栅电极的端部，栅极绝缘膜介于它们之间， 至少覆盖半导体膜的侧面的膜，以及覆盖半导体膜的侧面的膜上的一对配线; 其中作为供体的杂质元素被添加到半导体膜。

公开(公告)号：US08138032B2

公开(公告)日：2012-03-20

申请号：US12423111

申请日：2009-04-14

申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。 晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

公开(公告)号：US08093112B2

公开(公告)日：2012-01-10

申请号：US12219018

申请日：2008-07-15

申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

IPC分类号： H01L21/84

CPC分类号： H01L29/78678 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured.

摘要翻译： 提供了一种以高产率制造包括具有高可靠性的薄膜晶体管的显示装置的方法。 在栅电极上形成栅极绝缘膜; 在栅极绝缘膜上形成微晶半导体; 微晶半导体膜从其表面侧照射激光束，从而提高微晶半导体膜的结晶度。 然后，使用结晶度提高的微晶半导体膜形成薄膜晶体管。 此外，制造包括薄膜晶体管的显示装置。

公开(公告)号：US08034724B2

公开(公告)日：2011-10-11

申请号：US11826228

申请日：2007-07-13

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

IPC分类号： H01L21/31

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

摘要翻译： 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。 首先，在基板上形成包含半导体膜的层，并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来， 用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

公开(公告)号：US20090023236A1

公开(公告)日：2009-01-22

申请号：US12219018

申请日：2008-07-15

申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Kosei Nei

IPC分类号： H01L21/00

CPC分类号： H01L29/78678 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured.

摘要翻译： 提供了一种以高产率制造包括具有高可靠性的薄膜晶体管的显示装置的方法。 在栅电极上形成栅极绝缘膜; 在栅极绝缘膜上形成微晶半导体; 微晶半导体膜从其表面侧照射激光束，从而提高微晶半导体膜的结晶度。 然后，使用结晶度提高的微晶半导体膜形成薄膜晶体管。 此外，制造包括薄膜晶体管的显示装置。