发明授权
- 专利标题： Contact etch stop layers of a field effect transistor
- 专利标题（中）： 接触场效应晶体管的蚀刻停止层
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申请号： US12849601申请日： 2010-08-03
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公开(公告)号： US08450216B2公开(公告)日： 2013-05-28
- 发明人: Lee-Wee Teo , Ming Zhu , Bao-Ru Young , Harry-Hak-Lay Chuang
- 申请人： Lee-Wee Teo , Ming Zhu , Bao-Ru Young , Harry-Hak-Lay Chuang
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.
公开/授权文献
- US20120032238A1 CONTACT ETCH STOP LAYERS OF A FIELD EFFECT TRANSISTOR 公开/授权日：2012-02-09
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