发明授权
US08450792B2 Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)
有权
隧道场效应晶体管的结构和制造方法具有增加的驱动电流和降低的栅极引起的漏极泄漏（GIDL）
- 专利标题： Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)
- 专利标题（中）： 隧道场效应晶体管的结构和制造方法具有增加的驱动电流和降低的栅极引起的漏极泄漏（GIDL）
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申请号： US13082867申请日： 2011-04-08
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公开(公告)号： US08450792B2公开(公告)日： 2013-05-28
- 发明人: Mohit Bajaj , Kota V. R. M. Murali , Edward J. Nowak , Rajan K. Pandey
- 申请人： Mohit Bajaj , Kota V. R. M. Murali , Edward J. Nowak , Rajan K. Pandey
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Michael J. LeStrange
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
Gate induced drain leakage in a tunnel field effect transistor is reduced while drive current is increased by orienting adjacent semiconductor bodies, based on their respective crystal orientations or axes, to optimize band-to-band tunneling at junctions. Maximizing band-to-band tunneling at a source-channel junction increases drive current, while minimizing band-to-band tunneling at a channel-drain junction decreases GIDL. GIDL can be reduced by an order of magnitude in an embodiment. Power consumption for a given frequency can also be reduced by an order of magnitude.
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