Invention Grant
- Patent Title: Variable resistance memory devices and methods of programming variable resistance memory devices
- Patent Title (中): 可变电阻存储器件和编程可变电阻存储器件的方法
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Application No.: US12851681Application Date: 2010-08-06
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Publication No.: US08451645B2Publication Date: 2013-05-28
- Inventor: Hong-Sik Yoon , Min-Young Park , In-Gyu Baek , Hyun-Jun Sim , Jin-Shi Zhao
- Applicant: Hong-Sik Yoon , Min-Young Park , In-Gyu Baek , Hyun-Jun Sim , Jin-Shi Zhao
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0072889 20090807
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A variable resistance memory device includes a variable resistance memory cell, and a by-pass circuit configured to electrically by-pass a programming pulse supplied to the variable resistance memory cell after a resistive state of the variable resistance memory cell has changed in response to the programming pulse.
Public/Granted literature
- US20110032747A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF PROGRAMMING VARIABLE RESISTANCE MEMORY DEVICES Public/Granted day:2011-02-10
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