Invention Grant
- Patent Title: Semiconductor device including internal voltage generation circuit
- Patent Title (中): 半导体器件包括内部电压产生电路
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Application No.: US13080114Application Date: 2011-04-05
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Publication No.: US08451678B2Publication Date: 2013-05-28
- Inventor: Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
- Applicant: Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-069086 20060314
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
Public/Granted literature
- US20110182131A1 SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT Public/Granted day:2011-07-28
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