发明授权
- 专利标题： Deposition of germanium film
- 专利标题（中）： 沉积锗膜
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申请号： US13229440申请日： 2011-09-09
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公开(公告)号： US08455292B2公开(公告)日： 2013-06-04
- 发明人: Solomon Assefa , Pratik P. Joshi , Deborah A. Neumayer
- 申请人： Solomon Assefa , Pratik P. Joshi , Deborah A. Neumayer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.
公开/授权文献
- US20130065349A1 Deposition of Germanium Film 公开/授权日：2013-03-14
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