Invention Grant
- Patent Title: Interfacing two insulation parts in high voltage environment
- Patent Title (中): 在高压环境下接合两个绝缘部件
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Application No.: US12983706Application Date: 2011-01-03
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Publication No.: US08455760B2Publication Date: 2013-06-04
- Inventor: Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
- Applicant: Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01R4/02
- IPC: H01R4/02
Abstract:
Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
Public/Granted literature
- US20110094798A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT Public/Granted day:2011-04-28
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