Invention Grant
US08455854B2 Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same
有权
包括非晶合金金属氧化物层的非易失性存储器件及其制造方法
- Patent Title: Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same
- Patent Title (中): 包括非晶合金金属氧化物层的非易失性存储器件及其制造方法
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Application No.: US11704365Application Date: 2007-02-09
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Publication No.: US08455854B2Publication Date: 2013-06-04
- Inventor: Choong-Rae Cho , Sung-Il Cho , In-Kyeong Yoo , Eun-Hong Lee , Chang-Wook Moon
- Applicant: Choong-Rae Cho , Sung-Il Cho , In-Kyeong Yoo , Eun-Hong Lee , Chang-Wook Moon
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0016224 20060220
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.
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