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    High load and high precision polygonal guide
    1.
    发明授权
    High load and high precision polygonal guide 有权
    高负荷和高精度多边形导轨

    公开(公告)号：US09451736B2

    公开(公告)日：2016-09-20

    申请号：US14349780

    申请日：2012-01-05

    申请人： Moon-young Jin ,  Choong-rae Cho ,  Min-seok Hong

    发明人： Moon-young Jin ,  Choong-rae Cho ,  Min-seok Hong

    IPC分类号： B23P19/00 ,  H05K13/04 ,  H01L21/683 ,  F16H19/02

    CPC分类号： H05K13/0408 ,  F16H19/025 ,  H01L21/6838 ,  H05K13/0404 ,  H05K13/0413 ,  Y10T29/53191 ,  Y10T74/18568

    摘要： The present invention relates to a high load and high precision polygonal guide, and to a picker actuator using same, wherein the polygonal guide includes: an integrated ball cage designed and formed in a polygon and having a plurality of ball receiving holes formed on each side of the polygonal ball cage for receiving balls; a housing having a polygonal through hole for rolling motion such that, after the balls are inserted into the ball receiving holes formed on each side of the polygonal ball cage, the balls cannot escape from the ball receiving holes; and a guide post inserted and fitted inside the polygonal ball cage into which the balls are inserted and fitted, whereby the guide post or the housing reciprocates in a straight line by the rolling motion of the balls.

    摘要翻译： 本发明涉及一种高负载高精度多边形引导件以及使用该多边导向器的拾取致动器，其特征在于，所述多边形引导件包括：集成球保持器，其设计并形成为多边形，并且在每一侧形成有多个球接收孔 用于接收球的多边形球笼; 具有用于滚动运动的多边形通孔的壳体，使得在球被插入形成在多边形球笼的每一侧上的球接收孔中之后，球不能从球接收孔逸出; 以及插入并安装在所述球被插入和嵌合的多边形球笼内的引导柱，由此所述引导柱或所述壳体通过所述滚珠的滚动而沿直线往复运动。

    Non-volatile memory devices, methods of manufacturing and methods of operating the same
    2.
    发明授权
    Non-volatile memory devices, methods of manufacturing and methods of operating the same 失效
    非易失性存储器件，制造方法和操作方法

    公开(公告)号：US08624331B2

    公开(公告)日：2014-01-07

    申请号：US12659644

    申请日：2010-03-16

    申请人： Deok-kee Kim ,  Choong-rae Cho

    发明人： Deok-kee Kim ,  Choong-rae Cho

    IPC分类号： H01L29/76

    CPC分类号： H01L45/146 ,  H01L27/249 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1666

    摘要： A non-volatile memory device includes: at least one horizontal electrode; at least one vertical electrode disposed to intersect the at least one horizontal electrode at an intersection region; at least one data layer disposed at the intersection region and having a conduction-insulation transition property; and at least one anti-fuse layer connected in series with the at least one data layer.

    摘要翻译： 非易失性存储器件包括：至少一个水平电极; 至少一个垂直电极，设置成在交叉区域与所述至少一个水平电极相交; 至少一个数据层设置在交叉区域并具有导电绝缘转移特性; 以及与所述至少一个数据层串联连接的至少一个反熔丝层。

    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    4.
    发明申请
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US20110059576A1

    公开(公告)日：2011-03-10

    申请号：US12926042

    申请日：2010-10-22

    申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC分类号： H01L21/02

    CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    7.
    发明申请
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US20070267675A1

    公开(公告)日：2007-11-22

    申请号：US11798703

    申请日：2007-05-16

    申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC分类号： H01L29/94 ,  H01L21/8242

    CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

    Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor
    8.
    发明申请
    Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor 审中-公开
    包括物理变化层的晶体管，晶体管的操作方法和制造晶体管的方法

    公开(公告)号：US20060197082A1

    公开(公告)日：2006-09-07

    申请号：US11363235

    申请日：2006-02-28

    申请人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

    发明人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

    IPC分类号： H01L29/18

    CPC分类号： H01L29/7869 ,  H01L29/78681 ,  H01L49/003

    摘要： A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation layer formed on a substrate, the first and second conductive layer patterns, the physical property-changing layer, a dielectric layer, for example, a high dielectric layer, and a gate electrode. The first and second conductive layer patterns may be spaced apart from each other on the insulation layer. The physical property-changing layer may be formed on a portion of the insulation layer between the first and second conductive layer patterns. The dielectric layer may be stacked on the physical property-changing layer and the gate electrode may be formed on the high dielectric layer.

    摘要翻译： 提供了使用物理性质改变层的晶体管，晶体管的操作方法和晶体管的制造方法。 晶体管可以包括形成在衬底上的绝缘层，第一和第二导电层图案，物理性质改变层，介电层，例如高电介质层和栅电极。 第一和第二导电层图案可以在绝缘层上彼此间隔开。 物理变化层可以形成在第一和第二导电层图案之间的绝缘层的一部分上。 电介质层可以堆叠在物理变化层上，并且栅电极可以形成在高电介质层上。

    Electronic Devices and Thermal Image Sensors that Utilize Embedded Quantum Dots
    9.
    发明申请
    Electronic Devices and Thermal Image Sensors that Utilize Embedded Quantum Dots 有权
    使用嵌入式量子点的电子设备和热图像传感器

    公开(公告)号：US20110227041A1

    公开(公告)日：2011-09-22

    申请号：US13051199

    申请日：2011-03-18

    申请人： Choong Rae Cho

    发明人： Choong Rae Cho

    IPC分类号： H01L29/66 ,  B82Y15/00

    CPC分类号： B82Y15/00 ,  G01J5/20 ,  H01L27/14669 ,  H01L31/0352

    摘要： Integrated circuit devices include thermal image sensors that utilize quantum dots therein to provide negative resistance characteristics to at least portions of the sensors. The thermal image sensor may include a sensing unit configured to absorb radiation incident on a first surface thereof and first and second electrodes electrically coupled to the sensing unit. The sensing unit includes a plurality of quantum dots therein, which may extend between the first and second electrodes. These quantum dots may be configured to impart a negative resistance characteristic to the sensing unit. In particular, the sensing unit may include a sensing layer having first and second opposing ends, which are electrically coupled to the first and second electrodes, respectively, and the plurality of quantum dots may be distributed within the sensing layer.

    摘要翻译： 集成电路器件包括利用其中的量子点向至少部分传感器提供负电阻特性的热图像传感器。 热图像传感器可以包括被配置为吸收入射在其第一表面上的辐射的感测单元和电耦合到感测单元的第一和第二电极。 感测单元包括其中的多个量子点，其可以在第一和第二电极之间延伸。 这些量子点可以被配置为赋予感测单元负电阻特性。 特别地，感测单元可以包括具有第一和第二相对端的感测层，其分别电耦合到第一和第二电极，并且多个量子点可以分布在感测层内。

    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    10.
    发明授权
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US07842991B2

    公开(公告)日：2010-11-30

    申请号：US11798703

    申请日：2007-05-16

    申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC分类号： H01L27/108

    CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    摘要翻译： 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。