- 专利标题： Nanoelectronic structure and method of producing such
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申请号： US13227950申请日： 2011-09-08
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公开(公告)号： US08455857B2公开(公告)日： 2013-06-04
- 发明人: Lars Ivar Samuelson , Patrik Svensson , Jonas Ohlsson , Truls Lowgren
- 申请人： Lars Ivar Samuelson , Patrik Svensson , Jonas Ohlsson , Truls Lowgren
- 申请人地址： SE Lund
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 当前专利权人地址： SE Lund
- 代理机构： The Marbury Law Group PLLC
- 优先权： SE0602840 20061222
- 主分类号： H01L33/04
- IPC分类号： H01L33/04 ; H01L29/06
摘要：
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
公开/授权文献
- US20110316019A1 Nanoelectronic Structure and Method of Producing Such 公开/授权日：2011-12-29
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