发明授权
- 专利标题： Stressed semiconductor device and method of manufacturing
- 专利标题（中）： 强调半导体器件及其制造方法
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申请号： US13111732申请日： 2011-05-19
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公开(公告)号： US08455883B2公开(公告)日： 2013-06-04
- 发明人: Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
- 申请人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L31/052 ; H01L21/331
摘要：
A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
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