发明授权
- 专利标题： Nitride semiconductor light emitting device
- 专利标题（中）： 氮化物半导体发光器件
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申请号： US13221456申请日： 2011-08-30
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公开(公告)号： US08455917B2公开(公告)日： 2013-06-04
- 发明人: Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
- 申请人： Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shigeya Kimura , Shinya Nunoue
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.