Invention Grant
- Patent Title: Bulk acoustic wave resonator disposed on a substrate having a buried cavity formed therein providing different substrate thicknesses underneath the resonator
- Patent Title (中): 放置在其上形成有掩埋腔的衬底上的体声波谐振器提供在谐振器下面的不同衬底厚度
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Application No.: US12783095Application Date: 2010-05-19
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Publication No.: US08456258B2Publication Date: 2013-06-04
- Inventor: Perceval Coudrain , David Petit
- Applicant: Perceval Coudrain , David Petit
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR0953373 20090520
- Main IPC: H03H9/54
- IPC: H03H9/54
Abstract:
A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values.
Public/Granted literature
- US20100295631A1 BULK ACOUSTIC WAVE RESONATOR AND METHOD FOR MANUFACTURING SAID RESONATOR Public/Granted day:2010-11-25
Information query
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