Invention Grant
- Patent Title: Random access memory circuit
- Patent Title (中): 随机存取存储器电路
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Application No.: US12535261Application Date: 2009-08-04
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Publication No.: US08456885B2Publication Date: 2013-06-04
- Inventor: Derek Tolmie , Arnaud Laflaquiere , Francois Roy
- Applicant: Derek Tolmie , Arnaud Laflaquiere , Francois Roy
- Applicant Address: GB Marlow Bucks FR Crolles
- Assignee: STMicroelectronics (R&D) Ltd.,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (R&D) Ltd.,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: GB Marlow Bucks FR Crolles
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. Attorneys at Law
- Priority: EP08275042 20080804
- Main IPC: G11C11/36
- IPC: G11C11/36

Abstract:
A random access memory circuit includes a plurality of pixels, each having a light sensitive area and a light blocking layer arranged over at least each of the light sensitive areas. In an alternative embodiment, the circuit includes a plurality of memory elements for storing data. Each memory element may comprise a bit node formed between a photodiode, having a light arranged over the photodiode, and a switching element, where data may be stored. The circuit may also include a plurality of reading and writing circuits for reading and writing data to and from the memory cells.
Public/Granted literature
- US20100061139A1 RANDOM ACCESS MEMORY CIRCUIT Public/Granted day:2010-03-11
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