Invention Grant
- Patent Title: Sub volt flash memory system
- Patent Title (中): 亚伏闪存系统
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Application No.: US13172599Application Date: 2011-06-29
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Publication No.: US08456904B2Publication Date: 2013-06-04
- Inventor: Hieu Van Tran , Sang T. Nguyen , Anh Ly , Hung Q. Nguyen
- Applicant: Hieu Van Tran , Sang T. Nguyen , Anh Ly , Hung Q. Nguyen
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Main IPC: G11C11/36
- IPC: G11C11/36

Abstract:
Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.
Public/Granted literature
- US20110255346A1 SUB VOLT FLASH MEMORY SYSTEM Public/Granted day:2011-10-20
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