发明授权
- 专利标题： Material and method for photolithography
- 专利标题（中）： 光刻材料和方法
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申请号： US13238335申请日： 2011-09-21
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公开(公告)号： US08460856B2公开(公告)日： 2013-06-11
- 发明人: Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
- 申请人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/30 ; G03F7/38 ; G03F7/09
摘要：
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
公开/授权文献
- US20120009524A1 MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY 公开/授权日：2012-01-12
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