Invention Grant
US08461636B2 Ferroic sensor having tini-film field-effect transistor and ferroic layer applied to substrate
失效
铁电传感器具有薄膜场效应晶体管和铁基层施加到基板上
- Patent Title: Ferroic sensor having tini-film field-effect transistor and ferroic layer applied to substrate
- Patent Title (中): 铁电传感器具有薄膜场效应晶体管和铁基层施加到基板上
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Application No.: US12223241Application Date: 2007-01-25
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Publication No.: US08461636B2Publication Date: 2013-06-11
- Inventor: Siegfried Bauer , Ingrid Graz , Reinhard Schwödiauer , Christoph Keplinger , Martin Kaltenbrunner , Stéphanie Perichon Lacour , Sigurd Wagner
- Applicant: Siegfried Bauer , Ingrid Graz , Reinhard Schwödiauer , Christoph Keplinger , Martin Kaltenbrunner , Stéphanie Perichon Lacour , Sigurd Wagner
- Applicant Address: AT Linz
- Assignee: Universität Linz
- Current Assignee: Universität Linz
- Current Assignee Address: AT Linz
- Agency: Collard & Roe, P.C.
- Priority: ATA114/2006 20060126
- International Application: PCT/AT2007/000032 WO 20070125
- International Announcement: WO2007/085035 WO 20070802
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786
Abstract:
A ferroic component is described, comprising a ferroic layer (10) arranged between two electrodes (12,13), a thin-film field-effect transistor (4) whose gate electrode (3) forms one of the two electrodes (12, 13) of the ferroic layer (10) which is joined to the gate electrode (3) via an intermediate layer (11) acting as a bonding agent, and a substrate that is used as a support. In order to obtain a flexible component it is proposed that the thin-film field-effect transistor (4) on the one hand and the ferroic layer (10) which consists of an internally charged cellular polymer on the other hand are applied to the substrate which is arranged as a flexible plastic film (1), optionally by interposing an insulating layer (2) therebetween.
Public/Granted literature
- US20100224919A1 Ferroic Component Public/Granted day:2010-09-09
Information query
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