摘要:
A method for forming a coating over a surface is disclosed. The method comprises depositing over a surface, a hybrid layer comprising a mixture of a polymeric material and a non-polymeric material. The hybrid layer may have a single phase or comprise multiple phases. The hybrid layer is formed by chemical vapor deposition using a single source of precursor material. The chemical vapor deposition process may be plasma-enhanced and may be performed using a reactant gas. The precursor material may be an organo-silicon compound, such as a siloxane. The hybrid layer may comprise various types of polymeric materials, such as silicone polymers, and various types of non-polymeric materials, such as silicon oxides. By varying the reaction conditions, the wt % ratio of polymeric material to non-polymeric material may be adjusted. The hybrid layer may have various characteristics suitable for use with organic light-emitting devices, such as optical transparency, impermeability, and/or flexibility.
摘要:
A method for forming a coating over a surface is disclosed. The method comprises depositing over a surface, a hybrid layer comprising a mixture of a polymeric material and a non-polymeric material. The hybrid layer may have a single phase or comprise multiple phases. The hybrid layer is formed by chemical vapor deposition using a single source of precursor material. The chemical vapor deposition process may be plasma-enhanced and may be performed using a reactant gas. The precursor material may be an organo-silicon compound, such as a siloxane. The hybrid layer may comprise various types of polymeric materials, such as silicone polymers, and various types of non-polymeric materials, such as silicon oxides. By varying the reaction conditions, the wt % ratio of polymeric material to non-polymeric material may be adjusted. The hybrid layer may have various characteristics suitable for use with organic light-emitting devices, such as optical transparency, impermeability, and/or flexibility.
摘要:
A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.
摘要:
Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.
摘要:
Ionic conductivity in ternary chalcogenides of the form AB.sub.x C.sub.y, where A is a metallic atom with atomic number no greater than 55 which has a +1 oxidation state, B is a group III A metallic atom and C is a group VI A atom, has been observed. This ionic conductivity makes the compounds useful as components in electrochemical cells, e.g., electrolytes and electrodes.
摘要:
A process for polishing both the cadmium and sulfur face of CdS using buffered HCl solutions has been found to produce very smooth crystal surfaces. Use of HCl solutions buffered to a pH between 2.2 and 2.8 to polish the cadmium face is quite effective. An equally effective polishing agent for the sulfur face is a HCl solution buffered to a pH between 0.7 and 1.3.
摘要:
Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 550.degree. centrigrade to about 600.degree. centigrade. In an annealing temperature range from 400.degree. centigrade to 625.degree. centigrade, an inversely dependent adjustment of annealing time is found desirable. The atmosphere preferably comprises mainly a substantially inert component and typically comprises an H.sub.2 + N.sub.2 mixture, such as forming gas (15% H.sub.2 + 85% N.sub.2).
摘要:
A three dimensional touch sensing system having a touch surface configured to detect a touch input located above the touch surface is disclosed. The system includes a plurality of capacitive touch sensing electrodes disposed on the touch surface, each electrode having a baseline capacitance and a touch capacitance based on the touch input. An oscillating plane is disposed below the touch surface. A touch detector is configured to drive one of the touch sensing electrodes with an AC signal having a frequency that shifts from a baseline frequency to a touch frequency based on the change in electrode capacitance from the baseline capacitance to the touch capacitance. The touch detector is configured to drive the oscillating plane to the touch frequency.
摘要:
Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO2-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.
摘要:
A ferroic component is described, comprising a ferroic layer (10) arranged between two electrodes (12,13), a thin-film field-effect transistor (4) whose gate electrode (3) forms one of the two electrodes (12, 13) of the ferroic layer (10) which is joined to the gate electrode (3) via an intermediate layer (11) acting as a bonding agent, and a substrate that is used as a support. In order to obtain a flexible component it is proposed that the thin-film field-effect transistor (4) on the one hand and the ferroic layer (10) which consists of an internally charged cellular polymer on the other hand are applied to the substrate which is arranged as a flexible plastic film (1), optionally by interposing an insulating layer (2) therebetween.