Invention Grant
- Patent Title: CMOS image sensor with reset shield line
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Application No.: US13251036Application Date: 2011-09-30
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Publication No.: US08461660B2Publication Date: 2013-06-11
- Inventor: Sohei Manabe
- Applicant: Sohei Manabe
- Applicant Address: US CA Santa Clara
- Assignee: Omnivision Technologies, Inc.
- Current Assignee: Omnivision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.
Public/Granted literature
- US20130082313A1 CMOS IMAGE SENSOR WITH RESET SHIELD LINE Public/Granted day:2013-04-04
Information query
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