Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13707150Application Date: 2012-12-06
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Publication No.: US08461907B2Publication Date: 2013-06-11
- Inventor: Hiroaki Ohkubo , Yasutaka Nakashiba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2005-259098 20050907
- Main IPC: H01H85/00
- IPC: H01H85/00

Abstract:
A semiconductor device includes a signal output unit, and a decision unit. The signal output unit includes m (≧2) pieces of fuses, a NAND gate, resistance elements, and an output terminal. The decision unit decides whether n or more pieces (m≧n≧2) of fuses are disconnected out of the m pieces of fuses included in the signal output unit, and outputs the result of a decision. When m=n=2, the decision unit is constituted of a NOR gate having two input terminals connected to a respective end of the fuses. Thus, a H-level potential signal is output at an output terminal of the NOR gate when the decision result is affirmative. On the other hand, when the decision result is negative, a L-level potential signal is output at the output terminal.
Public/Granted literature
- US20130093044A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-04-18
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