Invention Grant
- Patent Title: Fast quaternary content addressable memory cell
- Patent Title (中): 快速四级内容可寻址存储单元
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Application No.: US13015543Application Date: 2011-01-27
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Publication No.: US08462532B1Publication Date: 2013-06-11
- Inventor: Dimitri Argyres
- Applicant: Dimitri Argyres
- Applicant Address: US CA Santa Clara
- Assignee: Netlogic Microsystems, Inc.
- Current Assignee: Netlogic Microsystems, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G11C15/00
- IPC: G11C15/00

Abstract:
Quaternary CAM cells are provided that include one or more compare circuits that each has a minimal number of pull-down transistors coupled between the match line and ground potential. For some embodiments, the compare circuit includes two parallel paths between the match line and ground potential, with each parallel path consisting of a single pull-down transistor having a gate selectively coupled to the stored data value in response to a comparand value.
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