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US08462532B1 Fast quaternary content addressable memory cell 失效
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Fast quaternary content addressable memory cell
Abstract:
Quaternary CAM cells are provided that include one or more compare circuits that each has a minimal number of pull-down transistors coupled between the match line and ground potential. For some embodiments, the compare circuit includes two parallel paths between the match line and ground potential, with each parallel path consisting of a single pull-down transistor having a gate selectively coupled to the stored data value in response to a comparand value.
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