Invention Grant
US08464093B1 Memory array error correction 有权
存储器阵列纠错

Memory array error correction
Abstract:
A memory array comprises N+1 memory elements. N memory elements store data and one or more error check bits respectively derived from the stored data. A separate N+1 memory element stores parity bits generated from the data stored in the N memory elements. These parity bits are stored in. To recover from data errors, data in each N memory element are first checked using their respective error check bits. If faulty data are detected in one of the N memory elements, an exclusive-or operation is performed involving data in the remaining N−1 memory elements and parity bits in the N+1 memory element. This recovers the faulty data in the one memory element.
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