发明授权
- 专利标题： Power semiconductor module and fabrication method
- 专利标题（中）： 功率半导体模块及其制造方法
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申请号： US13236748申请日： 2011-09-20
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公开(公告)号： US08466007B2公开(公告)日： 2013-06-18
- 发明人: Eladio Clemente Delgado , Richard Alfred Beaupre , Stephen Daley Arthur , Ernest Wayne Balch , Kevin Matthew Durocher , Paul Alan McConnelee , Raymond Albert Fillion
- 申请人： Eladio Clemente Delgado , Richard Alfred Beaupre , Stephen Daley Arthur , Ernest Wayne Balch , Kevin Matthew Durocher , Paul Alan McConnelee , Raymond Albert Fillion
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Scott J. Asmus
- 主分类号： H01L21/50
- IPC分类号： H01L21/50
摘要：
A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a thickness sufficient to carry power currents and a control coupling portion having a thickness thinner than that of the power coupling portion; and a semiconductor power device physically coupled to the interconnect layer and electrically coupled to the power coupling portion of the electrical conductor.
公开/授权文献
- US20120009733A1 POWER SEMICONDUCTOR MODULE AND FABRICATION METHOD 公开/授权日：2012-01-12
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