Invention Grant
- Patent Title: Method of manufacturing a finned semiconductor device structure
- Patent Title (中): 制造翅片半导体器件结构的方法
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Application No.: US12749220Application Date: 2010-03-29
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Publication No.: US08466034B2Publication Date: 2013-06-18
- Inventor: Witold Maszara , Robert J. Miller
- Applicant: Witold Maszara , Robert J. Miller
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure.
Public/Granted literature
- US20110237046A1 METHOD OF MANUFACTURING A FINNED SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2011-09-29
Information query
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