发明授权
- 专利标题: Method of forming strained epitaxial carbon-doped silicon films
- 专利标题(中): 形成应变外延碳掺杂硅膜的方法
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申请号: US12830210申请日: 2010-07-02
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公开(公告)号: US08466045B2公开(公告)日: 2013-06-18
- 发明人: John Gumpher , Seungho Oh , Anthony Dip
- 申请人: John Gumpher , Seungho Oh , Anthony Dip
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.