Invention Grant
- Patent Title: MRAM device and method of assembling same
- Patent Title (中): MRAM装置及其组装方法
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Application No.: US13334006Application Date: 2011-12-21
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Publication No.: US08466539B2Publication Date: 2013-06-18
- Inventor: Jun Li , Jianhong Wang , Xuesong Xu , Jinzhong Yao , Wanming Yu
- Applicant: Jun Li , Jianhong Wang , Xuesong Xu , Jinzhong Yao , Wanming Yu
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor Inc.
- Current Assignee: Freescale Semiconductor Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Priority: CN201110044560 20110223
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
A method of assembling a magnetoresistive random access memory (MRAM) device includes providing a substrate having an opening. A tape is applied to a surface of the substrate and a first magnetic shield is placed onto the tape and within the substrate opening. An adhesive is applied between the first magnetic shield and the substrate to attach the first magnetic shield to the substrate. An MRAM die is attached to the first magnetic shield and bond pads of the MRAM die are connected to pads on the substrate with wires. A second magnetic shield is attached to a top surface of the MRAM die. An encapsulating material is dispensed onto the substrate, the MRAM die, the second magnetic shield and part of the first magnetic shield, cured, and then the tape is removed. Solder balls then may be attached to the substrate.
Public/Granted literature
- US20120211846A1 MRAM DEVICE AND METHOD OF ASSEMBLING SAME Public/Granted day:2012-08-23
Information query
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