发明授权
US08467224B2 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
有权
用于形成三维记忆和由其形成的记忆的石墨膜的镶嵌一体化方法
- 专利标题： Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
- 专利标题（中）： 用于形成三维记忆和由其形成的记忆的石墨膜的镶嵌一体化方法
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申请号： US12421405申请日： 2009-04-09
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公开(公告)号： US08467224B2公开(公告)日： 2013-06-18
- 发明人: April D. Schricker , Mark H. Clark , Andy Fu , Huiwen Xu
- 申请人： April D. Schricker , Mark H. Clark , Andy Fu , Huiwen Xu
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： Dugan & Dugan, PC
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; G11C11/21
摘要：
In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided.
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