Invention Grant
- Patent Title: Method of controlling non-volatile memory device
- Patent Title (中): 控制非易失性存储器件的方法
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Application No.: US13116214Application Date: 2011-05-26
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Publication No.: US08467262B2Publication Date: 2013-06-18
- Inventor: Hyun-Jin Choi , Chan-Ik Park , Jeong-Woo Lee , Sung-Joo Yoo
- Applicant: Hyun-Jin Choi , Chan-Ik Park , Jeong-Woo Lee , Sung-Joo Yoo
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.
Public/Granted literature
- US20110292729A1 Method of Controlling Non-Volatile Memory Device Public/Granted day:2011-12-01
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