发明授权
- 专利标题： Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion
- 专利标题（中）： 非易失性存储器件和形成非易失性存储器件的方法包括给绝缘层的上部相对于下部的蚀刻选择性
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申请号： US13571502申请日： 2012-08-10
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公开(公告)号： US08470704B2公开(公告)日： 2013-06-25
- 发明人: Seung-Jun Lee , Woon-Kyung Lee
- 申请人： Seung-Jun Lee , Woon-Kyung Lee
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2007-0123596 20071130
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a device isolation layer, a tunnel insulating structure disposed on the active region, and a charge storage structure disposed on the tunnel insulating structure. The nonvolatile memory device also includes a gate interlayer dielectric layer disposed on the charge storage structure, and a control gate electrode disposed on the gate interlayer dielectric layer. The charge storage structure includes an upper charge storage structure and a lower charge storage structure, and the upper charge storage structure has a higher impurity concentration than the lower charge storage structure.
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