发明授权
US08470711B2 Tone inversion with partial underlayer etch for semiconductor device formation
失效
用于半导体器件形成的部分底层蚀刻的色调反演
- 专利标题： Tone inversion with partial underlayer etch for semiconductor device formation
- 专利标题（中）： 用于半导体器件形成的部分底层蚀刻的色调反演
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申请号： US12952248申请日： 2010-11-23
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公开(公告)号： US08470711B2公开(公告)日： 2013-06-25
- 发明人: John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
- 申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Yuanmin Cai
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
公开/授权文献
- US20120126358A1 TONE INVERSION WITH PARTIAL UNDERLAYER ETCH 公开/授权日：2012-05-24
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