发明授权
- 专利标题： CD bias loading control with ARC layer open
- 专利标题（中）： CD偏压加载控制与ARC层打开
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申请号： US12809021申请日： 2008-12-09
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公开(公告)号： US08470715B2公开(公告)日： 2013-06-25
- 发明人: Kyeong-Koo Chi , Jonathan Kim
- 申请人： Kyeong-Koo Chi , Jonathan Kim
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 国际申请： PCT/US2008/086094 WO 20081209
- 国际公布： WO2009/085597 WO 20090709
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.
公开/授权文献
- US20100323525A1 CD BIAS LOADING CONTROL WITH ARC LAYER OPEN 公开/授权日：2010-12-23
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