Invention Grant
- Patent Title: Vapor deposition reactor for forming thin film
- Patent Title (中): 用于形成薄膜的蒸镀反应器
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Application No.: US12539477Application Date: 2009-08-11
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Publication No.: US08470718B2Publication Date: 2013-06-25
- Inventor: Sang In Lee
- Applicant: Sang In Lee
- Applicant Address: US CA Fremont
- Assignee: Synos Technology, Inc.
- Current Assignee: Synos Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Fenwick & West LLP
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
Public/Granted literature
- US20100041213A1 Vapor Deposition Reactor For Forming Thin Film Public/Granted day:2010-02-18
Information query
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